A low power and high gain CMOS LNA for UWB applications using a gate inductor

Abstract

A new ultra wideband low noise amplifier is presented.The ultra wideband LNA consists of two simple amplifiers. A common source topology by gate inductor is adopted for input stage to achieve wideband input matching and wider bandwidth. The second stage by noise cancelling technique achivies high flat gain .Realized in standard TSMC0.18μM CMOS. It achieves a maximum power gain of 11.8 dB, a bandwidth of 10GHz and 4.9dB minimum noise fiqure.The power consumption is 22mW from a 1.8v supply